Using advanced process:Tape-casting.
The process has the characteristics of high production efficiency, low cost, uniform and consistent performance . It can produce ultra-thin substrate. The thickness is from 0.15-1.5mm
Special specifications can be customized according to customer’s requirement.
Thermal conductivity : 170W/m.K
General Dimension Table
Product | Length and Width(mm) | Thickness(mm) |
Aluminium Nitride Ceramic Substrate | 101.6*101.6114.3*114.3110*110120*120127*127140*190 | 0.380.500.6350.761.01.21.5 |
Other dimension and thickness can be customized according to customer’s drawing. |
Material Specifications:
Properties | Item | Unit | ALN-170 | ALN-200 | ALN-230 |
Basic Property | Color | Light cyan,Grayish white | Beige | Beige | |
Density | g/cm3 | 3.3 | 3.3. | 3.3 | |
Surface Roughness | um | 0.2-0.6 | 0.2-0.75 | 0.2-0.75 | |
Camber | (length ‰) | <=3 | <=3 | <=3 | |
Thermal Properties | Thermal Conductivity | W/m.K | 170 | 200 | 230 |
Heat Conductivity | (10-6/℃)(20℃-800℃) | 4-6 | 4-6 | 4-6 | |
Mechanical Properties | Bending Strength | Mpa | >=400 | >=350 | >=350 |
Electrical Properties | Dielectric Constant | 1MHz | 8-9 | 8-9 | 8-9 |
Dielectric Strength | KV/mm | >=17 | >=17 | >=17 | |
Volume Resistivity | 20℃ Ʊ.Cm | >=1014 | >=1014 | >=1014 |
Applications:
The substrate are widely used in ceramic metallization such as DPC(Direct Plate Copper). Thin film supttering, AMB(Active Metal Brazing), Thick film printing etc.,.
After applying these metallization, they are using in high power LED industry, RF resistance applications, and high-power IGBT module applications.